FDP4D5N10C mosfet equivalent, n-channel mosfet.
* Max RDS(on) = 4.5 mW at VGS = 10 V, ID = 100 A
* Extremely Low Reverse Recovery Charge, Qrr
* 100% UIL Tested
* This Device is Pb−Free Halide, Free and .
* Synchronous Rectification for ATX / Server / Telecom PSU
* Motor Drives and Uninterruptible Power Supplies
This N−Channel MV MOSFET is produced using onsemi’s
advanced PowerTrench process that incorporates Shielded Gate technology. This Process has been Optimized to minimize on−state resistance and yet maintain superior switching performance with best in .
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